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Journal

1. Inhomogeneities in Ni/4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states , Journal of Applied Physics, Vol.101, 2007: 114514.

2. Superscrew Dislocations in Silicon Carbide: Dissociation, Aggregation and Formation, Journal of Applied Physics, Vol.99, 2006: 063513.

3. A Method to Determine Superscrew Dislocation Structure in Silicon Carbide, Material Science and Engineering B, Vol. 129, 2006: 216-221.

4. Investigation on Barrier Inhomogeneities in 4H-SiC Schottky Rectifiers, physica status solidi (a), Vol.203, 2006: 643-650.

5. Defect Driven Inhomogeneities in Ni/4H-SiC Schottky Barriers, Applied Physics Letters, Vol.87, 2005: 242106.

6. Investigation on small growth pits in 4H silicon carbide epilayers, Journal of Crystal Growth, Vol. 279, 2005: 425-432.

Conference

1. EpiEL Provides Advanced Optical Characterization for Nitride LED Epi-wafers, ICNS-7, Las Vegas, Nevada, USA, September 16-21, 2007.

2. EpiEL: Electroluminescence directly on LED epi-wafers, SPIE-OEA 2007, San Diego, California, USA, August 26-30, 2007.

3. The Impact of Surface Defects on SiC Schottky and Ohmic Contact Formation, ISDRS 2005, Bethesda, Maryland, December 7-9, 2005 (coauthored by).

4. A Study of Inhomogeneous Schottky diodes on n-type 4H-SiC, ICSCRM2005, Pittsburgh, PA, September 18-23, 2005 (coauthored by).

5. Nondestructive Defect Characterization and Its Applications in SiC Material and Device Development, 77^th S.C. Academy of Science Meetings, Winthrop University, March 16, 2005.