20060126: A method to control the Barrier Inhomogeneities in 4H-SiC Schottky Rectifiers

Currently SiC-based PN and Schottky junctions are still suffering fundamental device problems which can be briefed as forward-voltage degradation and Schottky barrier height (SBH) inhomogeneities respectively. SiC Schottky diodes with inhomogeneous barriers usually have excess reverse leakage current and excess forward current only at small on-state bias. One frustrating conclusion from previous researches is that none of the known defects could be claimed as the main factor controlling SBH inhomogeneities.

MaxMile Technologies has recently demonstrated a method which can be used to control the Schottky barrier inhomogeneities in SiC material. The experimental results indicated that the inhomogeneities could be precisely controlled, completely eliminated and exactly duplicated. This research reflects MaxMile's profound understanding of the correlation between defects & device performances in SiC material and device development and will be further used for developing device-favored SiC epitaxy.

For more information, please visit:

  1. Publication: Investigation on Barrier Inhomogeneities in 4H-SiC Schottky Rectifiers, physica status solidi (a), Vol.203, 2006: 643-650.

  2. Application note: Schottky barrier inhomogeneities in SiC Schottky contacts.


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